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ZXM64P035L3
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS -35
V
I D =-250 μ A, V GS =0V
I =-250 A, V DS = V GS
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
I DSS
I GSS
V GS(th)
-1.0
-1
100
A
nA
V
V DS =-35V, V GS =0V
V GS = 20V, V DS =0V
D
Static Drain-Source On-State Resistance R DS(on)
(1)
0.075
0.105
V GS =-10V, I D =-2.4A
V GS =-4.5V, I D =-1.2A
Forward Transconductance (1)(3)
g fs
2.3
S
V DS =-10V,I D =-1.2A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
825
250
80
pF
pF
pF
V DS =-25V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
4.4
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
6.2
40
29.2
46
9
11.5
ns
ns
ns
nC
nC
nC
V DD =-15V, I D =-2.4A
R G =6.0 , V GS =-10V
V DS =-24V,V GS =-10V,
I D =-2.4A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
30.2
27.8
-0.95
V
ns
nC
T J =25 C, I S =-2.4A,
V GS =0V
T J =25 C, I F =-2.4A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width = 300 s. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - J UNE 2004
3
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